Quantum-Confined Stark Shift Due to Piezoelectric Effect in InGaAs/GaAs Quantum Wells Grown on (111) A GaAs

Abstract

In0.2Ga0.8As/GaAs strained quantum wells (SQWs) were grown on GaAs (111)A just-oriented, 1° off and 5° off toward [110]- and [001]-oriented substrates. Dependence of strain relaxation on substrate orientation was studied by photoluminescence (PL) spectroscopy. Samples grown on GaAs (111)A 5° off toward [001]-oriented substrates showed the best optical characteristics and this substrate orientation was chosen for making p-i-n diodes. The PL spectrum shows the influence of a built-in electric field due to the piezoelectric effect. The blueshift of PL peaks with applied bias was demonstrated in a p-i-n structure. The PL peak corresponding to a 10 nm SQW blueshifted as much as 24 meV with only 1.2 V applied reverse bias.