JOURNAL ARTICLE
Quantum Confined Stark Effect in InGaAs/GaAs Quantum Wells under High Electric Fields
J. KavaliauskasG. KrivaitėA. GalickasI. ŠimkienéU. OlinMikael Ottosson
Year: 1995 Journal: physica status solidi (b) Vol: 191 (1)Pages: 155-159 Publisher: Wiley
Abstract
Abstract Photocurrent and electroreflectance spectroscopies are combined to study the transformation of the quantum confined Stark effect under high electric fields in shallow InGaAs/GaAs quantum wells. Experimental evidences of exciton quenching and carrier tunneling out of the well are obtained. The coupling between quasibound and continuum states in the strong electric field region results in the increase of absorption below the band gap of the barrier.
Keywords:
Electric field Quantum tunnelling Quantum-confined Stark effect Quantum well Stark effect Exciton Condensed matter physics Photocurrent Physics Chemistry Materials science Optoelectronics Quantum mechanics
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0.22
FWCI (Field Weighted Citation Impact)
15
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0.46
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Topics
Semiconductor Quantum Structures and Devices
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Quantum and electron transport phenomena
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Spectroscopy and Quantum Chemical Studies
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
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