Surfactant-mediated epitaxy of thin germanium films on SiGe(001) virtual substrates

J. Schmidt; Dominic Tetzlaff; E. Bugiel; Tobias Wietler

doi:10.1016/j.jcrysgro.2016.06.053

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Surfactant-mediated epitaxy of thin germanium films on SiGe(001) virtual substrates

J. Schmidt Dominic Tetzlaff E. Bugiel Tobias Wietler

Year: 2016 Journal: Journal of Crystal Growth Vol: 457 Pages: 171-176 Publisher: Elsevier BV

DOI: 10.1016/j.jcrysgro.2016.06.053

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Keywords:

Materials science Germanium Pulmonary surfactant Epitaxy Wafer Heterojunction Substrate (aquarium) Dislocation Thin film Layer (electronics) Relaxation (psychology) Stress relaxation Surface roughness Molecular beam epitaxy Crystallography Deposition (geology) Optoelectronics Nanotechnology Chemical engineering Composite material Silicon Chemistry

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Photonic and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Surfactant-mediated epitaxy of thin germanium films on SiGe(001) virtual substrates

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