JOURNAL ARTICLE

Electron Tunneling Through Ultra-Thin Gate Oxide Formed on Hydrogen-Terminated Si(100) Surfaces

Keywords:
Materials science Quantum tunnelling Hydrogen Silicon Oxide Electron Optoelectronics Nanotechnology Metallurgy

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Topics

Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Electron and X-Ray Spectroscopy Techniques
Physical Sciences →  Materials Science →  Surfaces, Coatings and Films
Advancements in Semiconductor Devices and Circuit Design
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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