JOURNAL ARTICLE
Electron Tunneling Through Ultra-Thin Gate Oxide Formed on Hydrogen-Terminated Si(100) Surfaces
Keywords:
Materials science Quantum tunnelling Hydrogen Silicon Oxide Electron Optoelectronics Nanotechnology Metallurgy
Metrics
2
Cited By
0.46
FWCI (Field Weighted Citation Impact)
0
Refs
0.70
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Topics
Semiconductor materials and devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Electron and X-Ray Spectroscopy Techniques
Physical Sciences → Materials Science → Surfaces, Coatings and Films
Advancements in Semiconductor Devices and Circuit Design
Physical Sciences → Engineering → Electrical and Electronic Engineering
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