Ultra-thin gate oxide growth on hydrogen-terminated silicon surfaces

M. Hirose; M. Hiroshima; T. Yasaka; Masaru Takakura; Seiichi Miyazaki

doi:10.1016/0167-9317(93)90121-k

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Ultra-thin gate oxide growth on hydrogen-terminated silicon surfaces

M. Hirose M. Hiroshima T. Yasaka Masaru Takakura Seiichi Miyazaki

Year: 1993 Journal: Microelectronic Engineering Vol: 22 (1-4)Pages: 3-9 Publisher: Elsevier BV

DOI: 10.1016/0167-9317(93)90121-k

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Keywords:

Materials science Silicon Thin film Optoelectronics Gate oxide Oxide Hydrogen Nanotechnology Chemistry Electrical engineering Metallurgy Transistor Engineering Organic chemistry

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ultra-thin gate oxide growth on hydrogen-terminated silicon surfaces

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