The modulation of Schottky barriers of metal–MoS<sub>2</sub> contacts via BN–MoS<sub>2</sub> heterostructures

Jie Su; Liping Feng; Yan Zhang; Zheng‐Tang Liu

doi:10.1039/c6cp02132h

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The modulation of Schottky barriers of metal–MoS₂ contacts via BN–MoS₂ heterostructures

Jie Su Liping Feng Yan Zhang Zheng‐Tang Liu

Year: 2016 Journal: Physical Chemistry Chemical Physics Vol: 18 (25)Pages: 16882-16889 Publisher: Royal Society of Chemistry

DOI: 10.1039/c6cp02132h

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Abstract

Metal/BN–MoS₂ contacts constituted by BN–MoS₂ heterostructures show an excellent contact nature compared to traditional metal–MoS₂ contacts. This paper proves to be instrumental in the future design of new MoS₂-based FETs with ohmic contact or p-type character.

Keywords:

Ohmic contact Heterojunction Materials science Metal Optoelectronics Schottky diode Schottky barrier Nanotechnology Metallurgy Diode

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MXene and MAX Phase Materials

Physical Sciences → Materials Science → Materials Chemistry

2D Materials and Applications

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

The modulation of Schottky barriers of metal–MoS₂ contacts via BN–MoS₂ heterostructures

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