Gate-Tunable Schottky Diodes in MoS<sub>2</sub>/TiSe<sub>2</sub> van der Waals Heterostructures

Guang‐jian Liu; Zhenyang Xiao; Jiawei Zhang; Linfeng Fei; Xiaxia Liao; Jiaren Yuan; Yangbo Zhou

doi:10.1021/acsaelm.5c00363

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Gate-Tunable Schottky Diodes in MoS₂/TiSe₂ van der Waals Heterostructures

Guang‐jian Liu Zhenyang Xiao Jiawei Zhang Linfeng Fei Xiaxia Liao Jiaren Yuan Yangbo Zhou

Year: 2025 Journal: ACS Applied Electronic Materials Vol: 7 (13)Pages: 5898-5905 Publisher: American Chemical Society

DOI: 10.1021/acsaelm.5c00363

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Keywords:

Heterojunction Materials science van der Waals force Schottky diode Optoelectronics Condensed matter physics Diode Physics Quantum mechanics Molecule

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2D Materials and Applications

Physical Sciences → Materials Science → Materials Chemistry

MXene and MAX Phase Materials

Physical Sciences → Materials Science → Materials Chemistry

Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Gate-Tunable Schottky Diodes in MoS₂/TiSe₂ van der Waals Heterostructures

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