JOURNAL ARTICLE
Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire
Monica HansenP. FiniLijie ZhaoA. AbareL.A. ColdrenJames S. SpeckSteven P. DenBaars
Year: 1999 Journal: MRS Proceedings Vol: 595 Publisher: Cambridge University Press
Keywords:
Sapphire Materials science Optoelectronics Diode Epitaxy Laser Dislocation Coalescence (physics) Optics Layer (electronics) Composite material Physics
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Topics
GaN-based semiconductor devices and materials
Physical Sciences → Physics and Astronomy → Condensed Matter Physics
Semiconductor Quantum Structures and Devices
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Ga2O3 and related materials
Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials
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