InGaN/GaN/AlGaN-based laser diodes grown on epitaxially laterally overgrown GaN

Shuji Nakamura

doi:10.1557/jmr.1999.0365

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InGaN/GaN/AlGaN-based laser diodes grown on epitaxially laterally overgrown GaN

Shuji Nakamura

Year: 1999 Journal: Journal of materials research/Pratt's guide to venture capital sources Vol: 14 (7)Pages: 2716-2731 Publisher: Springer Nature

DOI: 10.1557/jmr.1999.0365

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Keywords:

Materials science Sapphire Epitaxy Optoelectronics Diode Layer (electronics) Substrate (aquarium) Laser Facet (psychology) Optics Composite material

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

InGaN/GaN/AlGaN-based laser diodes grown on epitaxially laterally overgrown GaN

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