JOURNAL ARTICLE

InGaN/GaN/AlGaN-based laser diodes grown on epitaxially laterally overgrown GaN

Shuji Nakamura

Year: 1999 Journal:   Journal of materials research/Pratt's guide to venture capital sources Vol: 14 (7)Pages: 2716-2731   Publisher: Springer Nature
Keywords:
Materials science Sapphire Epitaxy Optoelectronics Diode Layer (electronics) Substrate (aquarium) Laser Facet (psychology) Optics Composite material

Metrics

21
Cited By
1.49
FWCI (Field Weighted Citation Impact)
43
Refs
0.84
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
ZnO doping and properties
Physical Sciences →  Materials Science →  Materials Chemistry

Related Documents

JOURNAL ARTICLE

InGaN-Based Blue Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates

Takashi MukaiKazunori TakekawaShuji Nakamura

Journal:   Japanese Journal of Applied Physics Year: 1998 Vol: 37 (7B)Pages: L839-L839
© 2026 ScienceGate Book Chapters — All rights reserved.