JOURNAL ARTICLE
ChemInform Abstract: ANALYTICAL AND EXPERIMENTAL STUDY OF 1 MEV ELECTRON IRRADIATED GALLIUM ALUMINUM ARSENIDE/GALLIUM ARSENIDE HETEROFACE SOLAR CELLS
G. H. WalkerC. E. ByvikE. J. ConwayJ. H. HeinbockelM. J. Doviak
Year: 1979 Journal: Chemischer Informationsdienst Vol: 10 (13) Publisher: Wiley
Abstract
Abstract GaAlAs/GaAs‐Heteroflächen‐Solarzellen mit einer Übergangstiefe von 4 μm werden mit 1 MeV‐Elektronen bei Flußdichten zwischen 10 13 und 10 16 Elektronen/cm 2 bestrahlt.
Keywords:
Gallium arsenide Gallium Materials science Aluminium Electron Irradiation Arsenide Optoelectronics Physics Nuclear physics Metallurgy
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Topics
Chalcogenide Semiconductor Thin Films
Physical Sciences → Engineering → Electrical and Electronic Engineering
solar cell performance optimization
Physical Sciences → Engineering → Electrical and Electronic Engineering
Silicon and Solar Cell Technologies
Physical Sciences → Engineering → Electrical and Electronic Engineering
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