Optical Properties of N-doped β-Ga₂O₃Films Deposited by RF Magnetron Sputtering

Abstract

The N-doped β-Ga2O3 films were grown on Si and quartz substrates by RF magnetron sputtering in different ammonia partial pressure ratios(from 0% to 30%).The influence of ammonia partial pressure ratio and annealing treatment on the optical and structural properties were studied.The microstructure,optical transmittance,optical absorption and optical energy gap of the N-doped β-Ga2O3 films were significantly changed with the increasing of ammonia partial pressure.The green,blue and ultraviolet emission bands were observed and discussed.