JOURNAL ARTICLE

Structural and optical properties of Zn-doped β-Ga2O3films

Wei YueJinliang YanJiangyan WuLiying Zhang

Year: 2012 Journal:   Journal of Semiconductors Vol: 33 (7)Pages: 073003-073003   Publisher: IOP Publishing

Abstract

Intrinsic β-Ga2O3 and Zn-doped β-Ga2O3 films were prepared using RF magnetron sputtering. The effects of the Zn doping and thermal annealing on the structural and optical properties are investigated. In comparison with the intrinsic β-Ga2O3 films, the microstructure, optical transmittance, optical absorption, optical energy gap, and photoluminescence of Zn-doped β-Ga2O3 films change significantly. The post-annealed β-Ga2O3 films are polycrystalline. After Zn doping, the crystallization deteriorates, the optical band gap shrinks, the transmittance decreases and the UV, blue, and green emission bands are enhanced.

Keywords:
Materials science Doping Photoluminescence Band gap Crystallite Transmittance Annealing (glass) Crystallization Sputter deposition Microstructure Thin film Optoelectronics Analytical Chemistry (journal) Sputtering Nanotechnology Chemistry Metallurgy

Metrics

38
Cited By
0.35
FWCI (Field Weighted Citation Impact)
13
Refs
0.54
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Ga2O3 and related materials
Physical Sciences →  Materials Science →  Electronic, Optical and Magnetic Materials
ZnO doping and properties
Physical Sciences →  Materials Science →  Materials Chemistry
Advanced Photocatalysis Techniques
Physical Sciences →  Energy →  Renewable Energy, Sustainability and the Environment

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