Growth and Characterization of Copper Indium Diselenide Thin Films by Molecular Beam Deposition

H.Y. Ueng; D. Y. Chang; Ju-Li Lin

doi:10.1557/proc-426-255

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Growth and Characterization of Copper Indium Diselenide Thin Films by Molecular Beam Deposition

H.Y. Ueng D. Y. Chang Ju-Li Lin

Year: 1996 Journal: MRS Proceedings Vol: 426 Publisher: Cambridge University Press

DOI: 10.1557/proc-426-255

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Keywords:

Materials science Crystallite Indium Thin film Molecular beam epitaxy Copper Deposition (geology) Grain size Analytical Chemistry (journal) Optoelectronics Composite material Metallurgy Nanotechnology Epitaxy Layer (electronics)

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Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Quantum Dots Synthesis And Properties

Physical Sciences → Materials Science → Materials Chemistry

Advanced Semiconductor Detectors and Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

Growth and Characterization of Copper Indium Diselenide Thin Films by Molecular Beam Deposition

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