Preparation and Properties of ferroelectric Bi2SrTa2O9 thin films for FeRAM using Flash-MOCVD

T. Ami; Katsuyuki Hironaka; C. Isobel; N. Nagel; Masataka Sugiyama; Yuji Ikeda; Kôji Watanabe; Akio Machida; K. Miura; Masahiro Tanaka

doi:10.1557/proc-415-195

JOURNAL ARTICLE

Preparation and Properties of ferroelectric Bi₂SrTa₂O₉ thin films for FeRAM using Flash-MOCVD

T. Ami Katsuyuki Hironaka C. Isobel N. Nagel Masataka Sugiyama Yuji Ikeda Kôji Watanabe Akio Machida K. Miura Masahiro Tanaka

Year: 1995 Journal: MRS Proceedings Vol: 415 Publisher: Cambridge University Press

DOI: 10.1557/proc-415-195

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Keywords:

Materials science Ferroelectric RAM Metalorganic vapour phase epitaxy Ferroelectricity Annealing (glass) Coercivity Thin film Bismuth Optoelectronics Nanotechnology Dielectric Composite material Condensed matter physics Metallurgy Epitaxy Layer (electronics)

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Ferroelectric and Piezoelectric Materials

Physical Sciences → Materials Science → Materials Chemistry

Multiferroics and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Microwave Dielectric Ceramics Synthesis

Physical Sciences → Engineering → Electrical and Electronic Engineering

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Preparation and Properties of ferroelectric Bi2SrTa2O9 thin films for FeRAM using Flash-MOCVD

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