Effects of bi₂o₃ buffer layer on ferroelectric properties of srbi₂ta₂o₉ thin films by liquid-delivery mocvd

Abstract

Abstract Ferroelectric SrBi2Ta2O9 thin films were deposited on the Bi2O3 buffered Pt/Ti/SiO2/Si substrates using liquid-delivery metalorganic chemical vapor deposition. SBT films with 5nm thick-Bi2O3 buffer layer on Pt bottom electrode showed stronger (115) orientation than those without Bi2O3 buffer layer after annealing at 750°C. The value of the remanent polarization of SBT films with Bi2O3 buffer layer were improved significantly in comparison with those for the films without Bi2O3 buffer layer. The remanent polarization(2Pr) and coercive field(Ec) of SBT films without and with Bi2O3buffer layer annealed at 750°C were 11.9, 20.8 μ C/cm2 and 57, 37.8kV/cm at an applied voltage of 5 V, respectively.