Titanium Nitride Thin Films: Properties and Apcvd Synthesis Using Organometallic Precursors

Renaud M. Fix; Roy G. Gordon; David M. Hoffman

doi:10.1557/proc-168-357

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Titanium Nitride Thin Films: Properties and Apcvd Synthesis Using Organometallic Precursors

Renaud M. Fix Roy G. Gordon David M. Hoffman

Year: 1989 Journal: MRS Proceedings Vol: 168 Publisher: Cambridge University Press

DOI: 10.1557/proc-168-357

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Keywords:

Materials science X-ray photoelectron spectroscopy Titanium nitride Tin Titanium Rutherford backscattering spectrometry Thin film Nitriding Carbon fibers Chemical engineering Silicon Nitride Nitrogen Metallurgy Nanotechnology Layer (electronics) Composite material Composite number Organic chemistry

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Metal and Thin Film Mechanics

Physical Sciences → Engineering → Mechanics of Materials

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Titanium Nitride Thin Films: Properties and Apcvd Synthesis Using Organometallic Precursors

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