TEM Analysis of Grain Boundary in Y<sub>2</sub>O<sub>3</sub>-Nd<sub>2</sub>O<sub>3</sub>-Doped Silicon Nitride
Naoto HirosakiYasuhide InoueYoshio Akimune
Abstract
The grain boundary phase in gas-pressure sintered silicon nitride containing 1mol% (SN1) and 10mol% (SN10) of equi-molar Y2O3-Nd2O3 was investigated using a transmission electron microscopy. In SN1, grain boundary phases were observed in two-grain boundaries and multi-grain boundaries. In SN10, pockets of an additive-rich glassy phase were observed beside two-grain boundaries and multi-grain boundaries, showing that too much additive caused glassy pockets. SN1 contained silica-rich phase in the multi-grain boundary, although SN10 contained additive-rich phase. Silica-rich phase with a lower melting temperature contributed to increased sinterability of SN1.
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