Near field optical spectroscopy of GaN quantum dots

Abstract

Quantum dots (QDs) in nitride-based structures are expected to improve characteristics of visible-to-UV optical emitters that are currently developed by employing 2-and 3 dimensional growth processes. The optical property of these nitride quantum dots (QD) is particularly interesting as it depicts the interplay of in-built strain induced electric fields and quantum confinement in the nitride based material system. When the dot size is of the order of the exciton Bohr radius, the quantum confinement and built-in polarization field affects both the exciton binding energy and the optical bandgap and allow tailoring of the optical properties of the system.