Near field scanning optical spectroscopy of InP single quantum dots

Abstract

We study InP quantum dots which are prepared by strain induced self-assembly on GaAs substrates with a GaInP buffer layer using a near field scanning optical microscope operating at near liquid He bath temperatures in the collection mode. Single quantum dots are identified spatially and spectrally due to their photoluminescence spectrum. Series of luminescence lines due to single dots of different sizes are discussed in terms of dot height and width fluctuations.