Piezoresistive Properties of Boron-Doped PECVD Microcrystalline Silicon Films

Shu Wen Guo; Song Sheng Tan; Wei Yuan Wang

doi:10.1557/proc-106-231

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Piezoresistive Properties of Boron-Doped PECVD Microcrystalline Silicon Films

Shu Wen Guo Song Sheng Tan Wei Yuan Wang

Year: 1987 Journal: MRS Proceedings Vol: 106 Publisher: Cambridge University Press

DOI: 10.1557/proc-106-231

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Keywords:

Materials science Piezoresistive effect Doping Microcrystalline silicon Plasma-enhanced chemical vapor deposition Thermionic emission Silicon Optoelectronics Analytical Chemistry (journal) Amorphous silicon Crystalline silicon

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Mechanical and Optical Resonators

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Piezoresistive Properties of Boron-Doped PECVD Microcrystalline Silicon Films

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