Characterization of Boron-Doped Microcrystalline Hydrogenated Silicon Films.

Abstract

Preparation and structure of B-doped microcrystalline hydrogenated silicon (Si : H) films produced by a glow-discharge decomposition method were studied at a low substrate temperature (120°C). The microcrystallization was confirmed to occur at 2% of SiH4 gas diluted by H2 and 200 W of the rf power of glow discharge. The Raman specta of Si : H films showed that the structure of microcrystals had a tensile stress. The tensile stress increased with increasing in SiH2 concentration in Si : H films. It was considered that divalent silicon atoms existed as defects in the Si : H films. Analysis of B in Si : H films by a secondary ion mass spectrometer (SIMS) showed that the concentration of B doped in microcrystalline Si : H films was lower than that in amorphous films.