Integrated Flexible and High‐Quality Thin Film Transistors Based on Monolayer MoS₂

Abstract

Integrated thin film transistors based on CVD-grown high-quality monolayer MoS2 are reported. Every device has the stable and uniformity mobility ˜13.9 ± 2 cm2 v-1 s-1 and an on/off ratio higher than 105. These MoS2 field effect transistors exhibit remarkably high mechanical flexibility with no obvious change of the electrical characteristics upon strain ˜1%. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.