JOURNAL ARTICLE

Highly Photo-Sensitive Diodes (SnO2and In2O3–Si) and Their Applications

Masaharu FujinakaYoshio MachiTomoyuki GotōMichio Nakano

Year: 1977 Journal:   Japanese Journal of Applied Physics Vol: 16 (12)Pages: 2211-2215   Publisher: Institute of Physics

Abstract

When a transparent SnO2 and In2O3 layer was used to make heterojunctions with Si, highly sensitive photo-diodes for weak visible light were obtained. Optical and electrical characteristics of these diodes have been investigated for to a photo-coupler and an electronic spectroscope. Connecting these diodes to a photo-coupler combined with a light-emitting diode, an improved current transfer ratio (CTR) of the photo-coupler compared to those of commercially available ones was achieved. In the application to the spectroscope, a photo-diode array was installed in place of the dry plate of the spectroscope, and a spectrum of the light source was obtained instantaneously on a cathode-ray tube using an IC multiplexer.

Keywords:
Diode Optoelectronics Materials science Multiplexer Cathode Light-emitting diode Spectrometer Optics Chemistry Multiplexing Physics Telecommunications

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Topics

Analytical Chemistry and Sensors
Physical Sciences →  Chemical Engineering →  Bioengineering
Gas Sensing Nanomaterials and Sensors
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Photonic and Optical Devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
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