Surface morphology and structure of hydrogen etched 3C-SiC(001) on Si(001)

Camilla Coletti; M. Hetzel; C. Virojanadara; Ulrich Starke; Stephen E. Saddow

doi:10.1557/proc-0911-b08-02

ScienceGate Book Chapters

JOURNAL ARTICLE

Surface morphology and structure of hydrogen etched 3C-SiC(001) on Si(001)

Camilla Coletti M. Hetzel C. Virojanadara Ulrich Starke Stephen E. Saddow

Year: 2006 Journal: MRS Proceedings Vol: 911 Publisher: Cambridge University Press

DOI: 10.1557/proc-0911-b08-02

Get Full-Text PDF Get Analytical Report

Keywords:

Materials science Auger electron spectroscopy Scanning electron microscope Etching (microfabrication) Morphology (biology) Chemical vapor deposition Hydrogen Analytical Chemistry (journal) Nanotechnology Composite material Layer (electronics) Chemistry

Metrics

Cited By

1.34

FWCI (Field Weighted Citation Impact)

Refs

0.84

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Topics

Silicon Carbide Semiconductor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Copper Interconnects and Reliability

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Surface morphology and structure of hydrogen etched 3C-SiC(001) on Si(001)

Metrics

Topics

Related Documents

Surface studies of hydrogen etched 3C-SiC(001) on Si(001)

Silicon (001) Heteroepitaxy on 3C-SiC(001)/Si(001) Seed

3C-SiC nanocrystal growth on 10° miscut Si(001) surface

Surface-Structure-Controlled Heteroepitaxial Growth of 3C–SiC(001)3×2 on Si(001): Simulations and Experiments

Si-adsorption induced phase transition on the 3C–SiC(001) surface