Si-adsorption induced phase transition on the 3C–SiC(001) surface

Junya Kitamura; Shiro Hara; Hideyo Okushi; S. Yoshida; S. Misawa; Keiji Kajimura

doi:10.1016/s0039-6028(99)00530-0

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Si-adsorption induced phase transition on the 3C–SiC(001) surface

Junya Kitamura Shiro Hara Hideyo Okushi S. Yoshida S. Misawa Keiji Kajimura

Year: 1999 Journal: Surface Science Vol: 433-435 Pages: 465-469 Publisher: Elsevier BV

DOI: 10.1016/s0039-6028(99)00530-0

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Keywords:

Adsorption Monolayer Scanning tunneling microscope Surface reconstruction Phase transition Molecular beam epitaxy Materials science Transition metal Phase (matter) Crystallography Crystal (programming language) Langmuir Epitaxy Chemical physics Chemistry Surface (topology) Analytical Chemistry (journal) Layer (electronics) Condensed matter physics Physical chemistry Nanotechnology Catalysis Geometry Physics Organic chemistry

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Silicon Carbide Semiconductor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Si-adsorption induced phase transition on the 3C–SiC(001) surface

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