JOURNAL ARTICLE

Characterization of Interfacial Alloy Formation in ZnSe/CdSe Quantum-Well Heterostructures by Photoluminescence Spectroscopy.

Abstract

The interface in a binary single quantum-well (SQW) structure of ZnSe/CdSe, where CdSe less than one monolayer is sandwiched by ZnSe layers (submonolayer SQW), is characterized by means of photoluminescence scpectroscopy. The dependence of the energy, linewidth and intensity of excitonic emission from the submonolayer SQWs on the well thickness of CdSe is extensively investigated. The characteristics of the excitonic emission are interpreted in terms of alloy formation at the interface. It is clarified that the ZnCdSe alloy is formed at the interface in ZnSe/CdSe quantum well heterostructure.

Keywords:
Photoluminescence Heterojunction Laser linewidth Materials science Quantum well Monolayer Alloy Optoelectronics Spectroscopy Condensed matter physics Nanotechnology Optics Physics Composite material Laser

Metrics

0
Cited By
0.00
FWCI (Field Weighted Citation Impact)
3
Refs
0.23
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Topics

Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
© 2026 ScienceGate Book Chapters — All rights reserved.