JOURNAL ARTICLE

Interfacial alloy formation in ZnSe/CdSe quantum-well heterostructures characterized by photoluminescence spectroscopy

Z. Q. ZhuHiroteru YoshiharaKazuhisa TakebayashiTakafumi Yao

Year: 1993 Journal:   Applied Physics Letters Vol: 63 (12)Pages: 1678-1680   Publisher: American Institute of Physics

Abstract

The interface of a binary single quantum-well (SQW) structure of ZnSe/CdSe, where CdSe less than one monolayer is sandwiched by ZnSe layers (submonolayer SQW), is characterized by photoluminescence spectroscopy. The dependence of the energy, linewidth, and intensity of excitonic emission from submonolayer SQWs on the well thickness of CdSe is extensively investigated. The characteristics of the excitonic emission are interpreted in terms of alloy formation at the interface.

Keywords:
Photoluminescence Heterojunction Quantum well Laser linewidth Monolayer Materials science Spectroscopy Condensed matter physics Wide-bandgap semiconductor Alloy Optoelectronics Nanotechnology Optics Physics Laser Metallurgy

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Citation History

Topics

Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Quantum Dots Synthesis And Properties
Physical Sciences →  Materials Science →  Materials Chemistry
Chalcogenide Semiconductor Thin Films
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
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