Carbon incorporation in metal-organic vapor phase epitaxy grown gaas from CHxl4-x, HI, and l2

N.I. Buchan; T. F. Kuech; G. Scilla; F. Cardone; R. M. Potemski

doi:10.1007/bf02733819

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Carbon incorporation in metal-organic vapor phase epitaxy grown gaas from CHxl4-x, HI, and l2

N.I. Buchan T. F. Kuech G. Scilla F. Cardone R. M. Potemski

Year: 1990 Journal: Journal of Electronic Materials Vol: 19 (3)Pages: 277-281 Publisher: Springer Science+Business Media

DOI: 10.1007/bf02733819

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Keywords:

Epitaxy Carbon fibers Metal Chemistry Decomposition Phase (matter) Catalysis Metalorganic vapour phase epitaxy Thin film Inorganic chemistry Materials science Analytical Chemistry (journal) Nanotechnology Organic chemistry

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Carbon incorporation in metal-organic vapor phase epitaxy grown gaas from CHxl4-x, HI, and l2

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