GaAs reflection photocathodes grown by metal alkyl vapor phase epitaxy

M.B. Allenson; S. J. Bass

doi:10.1063/1.88674

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GaAs reflection photocathodes grown by metal alkyl vapor phase epitaxy

M.B. Allenson S. J. Bass

Year: 1976 Journal: Applied Physics Letters Vol: 28 (3)Pages: 113-115 Publisher: American Institute of Physics

DOI: 10.1063/1.88674

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Abstract

GaAs reflection photocathodes grown by vapor-phase epitaxy using trimethyl gallium and arsine have been activated to a maximum sensitivity of 1150 μA 1m−1. The material is of high quality and has diffusion lengths and surface escape probabilities which are comparable with those measured for liquid-phase epitaxial material.

Keywords:

Epitaxy Arsine Gallium Vapor phase Reflection (computer programming) Materials science Gallium arsenide Phase (matter) Optoelectronics Analytical Chemistry (journal) Metal Diffusion Liquid phase Evaporation Chemistry Catalysis Nanotechnology Metallurgy

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Photocathodes and Microchannel Plates

Physical Sciences → Engineering → Biomedical Engineering

Radiation Detection and Scintillator Technologies

Physical Sciences → Physics and Astronomy → Radiation

Dark Matter and Cosmic Phenomena

Physical Sciences → Physics and Astronomy → Nuclear and High Energy Physics

GaAs reflection photocathodes grown by metal alkyl vapor phase epitaxy

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