Gate-All-Around Silicon Nanowire Devices: Are These the Future of CMOS?

Abstract

Though top-down approach, which leverages on conventional lithography, patterning for wire formation, has been considered as the closest to the manufacturing format, many technology issues or even barriers are still widely remained. These technology concerns will be presented in our discussion, in respect to both the horizontal and vertical wire platforms. With the analysis of the commonality and differences facing both platforms, the potential of the ultimate integration will be addressed