JOURNAL ARTICLE

Band Offsets In GaN/AlN and AlN/SiC Heterojunctions

N. BinggeliPhilippe FerraraA. Baldereschi

Year: 1997 Journal:   MRS Proceedings Vol: 482   Publisher: Cambridge University Press
Keywords:
Materials science Heterojunction Wurtzite crystal structure Band offset Pseudopotential Optoelectronics Condensed matter physics Band gap Valence band Zinc

Metrics

4
Cited By
0.00
FWCI (Field Weighted Citation Impact)
15
Refs
0.21
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Topics

GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Ga2O3 and related materials
Physical Sciences →  Materials Science →  Electronic, Optical and Magnetic Materials

Related Documents

JOURNAL ARTICLE

AlN and GaN epitaxial heterojunctions on 6H–SiC(0001): Valence band offsets and polarization fields

A. RizziR. LantierFulvia MontiH. LüthFabio Della SalaAldo Di CarloPaolo Lugli

Journal:   Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Year: 1999 Vol: 17 (4)Pages: 1674-1681
JOURNAL ARTICLE

Stability and band offsets of polar GaN/SiC(001) and AlN/SiC(001) interfaces

M. StädeleJacek A. MajewskiP. Vogl

Journal:   Physical review. B, Condensed matter Year: 1997 Vol: 56 (11)Pages: 6911-6920
© 2026 ScienceGate Book Chapters — All rights reserved.