JOURNAL ARTICLE

Band offsets in cubic GaN/AlN superlattices

Abstract

The presently unknown band offset in nonpolar cubic GaN/AlN superlattices is investigated by inter-sub-band and interband spectroscopies as well as ab initio calculations. On one hand, the conduction-band offset (CBO) has been determined from the comparison of the measured transition energies with model calculations within the effective mass approximation. On the other hand, the valence-band offset (VBO) and the CBO are accurately simulated by calculating many-body corrections within the $\mathit{GW}$ approximation on top of hybrid-functional density functional theory calculations. Thus, a CBO of $(1.4\ifmmode\pm\else\textpm\fi{}0.1) \mathrm{eV}$ and a VBO of $(0.5\ifmmode\pm\else\textpm\fi{}0.1) \mathrm{eV}$ is obtained as a result of both approaches.

Keywords:
Superlattice Valence band Conduction band Band offset Offset (computer science) Condensed matter physics Materials science Electronic band structure Ab initio Valence (chemistry) Ab initio quantum chemistry methods Physics Atomic physics Band gap Quantum mechanics Computer science

Metrics

58
Cited By
6.41
FWCI (Field Weighted Citation Impact)
74
Refs
0.98
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
Ga2O3 and related materials
Physical Sciences →  Materials Science →  Electronic, Optical and Magnetic Materials
Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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