High-Q Etchless Silicon Ring Resonator

Lian-Wee Luo; Gustavo S. Wiederhecker; Jaime Cárdenas; Michal Lipson

doi:10.1364/fio.2010.fthq5

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High-Q Etchless Silicon Ring Resonator

Lian-Wee Luo Gustavo S. Wiederhecker Jaime Cárdenas Michal Lipson

Year: 2010 Pages: FThQ5-FThQ5

DOI: 10.1364/fio.2010.fthq5

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Abstract

We demonstrate high-Q silicon ring resonators fabricated by selective oxidation without any silicon etching. We achieve an intrinsic quality factor of 480,000 in 50 µm radii rings with ring losses of 0.9 dB/cm.

Keywords:

Silicon Resonator Etching (microfabrication) Ring (chemistry) Materials science Q factor Optoelectronics Optical ring resonators Optics Silicon on insulator Physics Nanotechnology Layer (electronics) Chemistry

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Photonic and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advanced Fiber Laser Technologies

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Advanced Fiber Optic Sensors

Physical Sciences → Engineering → Electrical and Electronic Engineering

High-Q Etchless Silicon Ring Resonator

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