High confinement micron-scale silicon nitride high Q ring resonator

Alexander Gondarenko; Jacob S. Levy; Michal Lipson

doi:10.1364/oe.17.011366

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High confinement micron-scale silicon nitride high Q ring resonator

Alexander Gondarenko Jacob S. Levy Michal Lipson

Year: 2009 Journal: Optics Express Vol: 17 (14)Pages: 11366-11366 Publisher: Optica Publishing Group

DOI: 10.1364/oe.17.011366

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Abstract

We demonstrate high confinement, low-loss silicon nitride ring resonators with intrinsic quality factor (Q) of 3*10(6) operating in the telecommunication C-band. We measure the scattering and absorption losses to be below 0.065dB/cm and 0.055dB/cm, respectively.

Keywords:

Resonator Materials science Optics Silicon nitride Silicon Optoelectronics Absorption (acoustics) Scattering Q factor Nitride Layer (electronics) Physics Nanotechnology

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Photonic and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advanced Fiber Laser Technologies

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Mechanical and Optical Resonators

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

High confinement micron-scale silicon nitride high Q ring resonator

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