Heteroepitaxial Growth of 3C-SiC(111)on Si(110) Substrate Using Monomethylsilane

JOURNAL ARTICLE

Year: 2006 Journal: ECS Meeting Abstracts Vol: MA2006-02 (28)Pages: 1303-1303 Publisher: Institute of Physics

DOI: 10.1149/ma2006-02/28/1303

Abstract

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Keywords:

Materials science Substrate (aquarium) Optoelectronics Silicon carbide Engineering physics Nanotechnology Metallurgy Engineering Geology

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