Low-Temperature Heteroepitaxial Growth of 3C-SiC(111) on Si(110) Substrate Using Monomethylsilane

Abstract

Heteroepitaxial growth of 3C-SiC on Si(110) substrate has been successfully conducted at T=1000{degree sign}C by using monomethylsilane as a single source gas. X-ray diffraction (XRD) reveals that the growth orientation of the film is rotated and a 3C-SiC (111) film is formed on this Si(110) substrate. The film quality, as evaluated with the half width of the XRD rocking curve, shows betterment from that of 3C-SiC(111)/Si(111) film. The lattice constant anisotropy (a//-a⊥)/a// between the lateral and the growth directions also decreased by a factor of four from that of 3C-SiC(111)/Si(111), and the two lattice constants approach to that of bulk 3C-SiC. These results indicate significant reduction in the strain of the 3C-SiC film in this 3C-SiC(111)/Si(110) system. XRD-scan indicates presence of double domains with almost equal areas.