MONOLITHIC PYROELECTRIC INFRARED IMAGE SENSOR USING PVDF THIN FILM

Abstract

Abstract A 16 × 16 monolithic pyroelectric infrared image sensor has been developed. The image sensor utilizes an electro-spray (ESP)-deposited polyvinylidene fluoride (PVDF) thin film as a pyroelectric material, a buried-channel MOSFET as a low-noise detection device, and a micromachined membrane supported by four beams as a thermal isolation structure. A voltage sensitivity of 6600 V W −1 and a detectivity of 1.6 × 10 7 cm Hz 1/2 W −1 have been realized with a sensing area of 75 μm × 75 μm.