Reactive magnetron sputtered aluminium nitride films

Abstract

Aluminium nitride (AlN) films have been obtained on glass by reactive magnetron sputtering. Various gas pressures (in the range 0.12 – 0.7 Pa) with four different argon-nitrogen mixtures have been explored. The purpose of this work is to analyze the impact of nitrogen percentage on AlN films from the point of view of the intensity of the (002) peak measured by using XRD technique. New data are reported and trends of intensity peaks versus nitrogen percentage have been obtained.