Fabrication of High-Aspect-Ratio Structural Change Microregions in Silicon Carbide by Femtosecond Bessel Beams

Abstract

This letter presents the morphology of femtosecond Bessel beams induced high-aspect-ratio structural change regions in bulk silicon carbide. An axion is engaged in transforming Gaussians beams to Bessel beams, which are then focused on the surface or below the surface of the sample by combination of a plano-convex lens and a microscope objective. The sample is scanned by the focused femtosecond Bessel beams at the preset patterns. Through this method, the high-aspect-ratio uniform laser induced structure change regions have been produced and the highest respect ratio can reach 206 with the depth of 330 μm, the width of 1.6 μm in optimized conditions of appropriate focusing position and pulse energy. This result is attributed to uniform energy distribution in the long propagation distance of Bessel beams with nondiffracting. This technique will have great potential applications to make high-aspect-ratio microgrooves in wide-gap and transparent materials.