JOURNAL ARTICLE
12.5 Gb/s carrier-injection silicon Mach—Zehnder optical modulator
Hongtao ChenJianfeng Ding杨兰 YANG Lan
Year: 2012 Journal: Journal of Semiconductors Vol: 33 (11)Pages: 114005-114005 Publisher: IOP Publishing
Abstract
We demonstrate a 12.5 Gb/s carrier-injection silicon Mach?Zehnder optical modulator. Under a nonreturn-zero (NRZ) pre-emphasized electrical drive signal with voltage swing of 6.3 V and forward bias of 0.7 V, the eye is clearly opened with an extinction ratio of 8.4 dB. The device exhibits high modulation efficiency, with a figure of merit V?L of 0.036 V?mm.
Keywords:
Electro-optic modulator Mach–Zehnder interferometer Materials science Optoelectronics Silicon Physics Optics Optical modulator Interferometry Phase modulation Phase noise
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Citation History
Topics
Photonic and Optical Devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Optical Network Technologies
Physical Sciences → Engineering → Electrical and Electronic Engineering
Advanced Photonic Communication Systems
Physical Sciences → Engineering → Electrical and Electronic Engineering
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