Compact Carrier Injection Based Mach-Zehnder Modulator in Silicon

S. J. Spector; Matthew E. Grein; R. T. Schulein; M. W. Geis; Junghyo Yoon; D. M. Lennon; Fuwan Gan; Franz X. Kärtner; T. M. Lyszczarz

doi:10.1364/ipnra.2007.itue5

JOURNAL ARTICLE

Compact Carrier Injection Based Mach-Zehnder Modulator in Silicon

S. J. Spector Matthew E. Grein R. T. Schulein M. W. Geis Junghyo Yoon D. M. Lennon Fuwan Gan Franz X. Kärtner T. M. Lyszczarz

Year: 2007 Pages: ITuE5-ITuE5

DOI: 10.1364/ipnra.2007.itue5

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Abstract

CMOS-compatible, PIN diode Mach-Zehnder modulators have been fabricated. The devices operate at 10 GHz with a modulation depth of 25% at an input power of 100 mW. Compensated frequency response is flat to 5 GHz.

Keywords:

Materials science Modulation (music) Optoelectronics Electro-optic modulator Diode CMOS Silicon Mach–Zehnder interferometer Power (physics) PIN diode Electrical engineering Optics Optical modulator Phase modulation Physics Engineering Interferometry Acoustics

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Photonic and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advanced Photonic Communication Systems

Physical Sciences → Engineering → Electrical and Electronic Engineering

Optical Network Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Compact Carrier Injection Based Mach-Zehnder Modulator in Silicon

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