JOURNAL ARTICLE
Photonic Devices Based on Porous Silicon Layers
Year: 2007 Journal: Engineering and Technology Journal Vol: 25 (5)Pages: 696-701 Publisher: University of Technology, Iraq
Abstract
The optoelectronic properties of (Al/c-Si) and sandwich structure type(Al/PS/c-Si/Al) were reported. The nanostructure porous silicon is obtained byphotochemical etching without applying electric field. The photosensitivity of(Al/PS/c-Si/Al) structure is determined by porous layer photoconduction.Maximum spectral sensitivity of the porous layer is changed from (575-610)nm depending on preparation condition.
Keywords:
Porous silicon Materials science Photosensitivity Optoelectronics Etching (microfabrication) Porosity Layer (electronics) Silicon Nanostructure Photonics Porous medium Photonic crystal Electric field Composite material Nanotechnology
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4
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0.18
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Citation History
Topics
Silicon Nanostructures and Photoluminescence
Physical Sciences → Materials Science → Materials Chemistry
Nanowire Synthesis and Applications
Physical Sciences → Engineering → Biomedical Engineering
Semiconductor materials and devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
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