Thin-film boron-doped polycrystalline silicon70%-germanium30% for thermopiles

P. Van Gerwen; Thomas J. A. Slater; J.B. Chevrier; Kris Baert; R. Mertens

doi:10.1016/0924-4247(96)80156-7

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Thin-film boron-doped polycrystalline silicon70%-germanium30% for thermopiles

P. Van Gerwen Thomas J. A. Slater J.B. Chevrier Kris Baert R. Mertens

Year: 1996 Journal: Sensors and Actuators A Physical Vol: 53 (1-3)Pages: 325-329 Publisher: Elsevier BV

DOI: 10.1016/0924-4247(96)80156-7

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Keywords:

Figure of merit Thermopile Materials science Polycrystalline silicon Seebeck coefficient Doping Thermoelectric effect Optoelectronics Thin film Boron Chemical vapor deposition Thermal conductivity Electrical resistivity and conductivity Silicon Layer (electronics) Composite material Electrical engineering Nanotechnology Optics Thin-film transistor Chemistry Infrared

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Thermal properties of materials

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Thin-film boron-doped polycrystalline silicon70%-germanium30% for thermopiles

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