Oxidation Enhanced Diffusion of Phosphorus in Silicon in Heavily Doped Background Concentrations

Abstract

An experimental study investigates the oxidation‐enhanced diffusion of phosphorus in silicon in both heavily doped boron and arsenic backgrounds at 900 and 1100°C. This data can be modeled using the interstitial charge state levels to control the equilibrium concentration as a function of doping. The interstitials are assumed to be composed of only positive, negative, and neutral interstitial defects. The same values for the charge states are used to model previously published investigations of boron oxidation‐enhanced diffusion under extrinsic isoconcentration conditions. This indicates that these effects are not strongly dependent on the value of the fractional interstitialcy, since two different dopants exhibit similar behavior.