SiO₂ Insulation Layer Fabricated using RF Magnetron Facing Target Sputtering and Conventional RF Magnetron Sputtering

Abstract

We have investigated the deposition conditions for a SiO 2 insulation layer, such as the substrate-target length, Ar pressure and applied RF power density, using both RF magnetron facing target sputtering and the conventional RF sputtering techniques. We have fabricated an SiO 2 layer having with a good surface smoothness under the high deposition rate condition using the RF magnetron facing target sputtering technique.