JOURNAL ARTICLE
Epitaxial growth mechanism of pulsed laser deposited AlN films on Si (111) substrates
Hui YangWenliang WangZuolian LiuWeijiang YangGuoqiang Li
Year: 2014 Journal: CrystEngComm Vol: 16 (15)Pages: 3148-3154 Publisher: Royal Society of Chemistry
Abstract
The epitaxial growth mechanism and causes of dislocation formation in AlN films on a Si substrate by pulsed laser deposition (PLD) are comprehensively proposed.
Keywords:
Epitaxy Materials science Mechanism (biology) Pulsed laser deposition Laser Optoelectronics Chemical engineering Thin film Nanotechnology Optics Layer (electronics)
Metrics
30
Cited By
2.85
FWCI (Field Weighted Citation Impact)
42
Refs
0.94
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Citation History
Topics
GaN-based semiconductor devices and materials
Physical Sciences → Physics and Astronomy → Condensed Matter Physics
Metal and Thin Film Mechanics
Physical Sciences → Engineering → Mechanics of Materials
Semiconductor materials and devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
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University: reposiTUm (TU Wien) Year: 2020