Epitaxial growth of Nd2Hf2O7(111) thin films on Ge(111) substrates by pulsed laser deposition

Wei Feng; Hailing Tu; Jun Du

doi:10.1016/j.apsusc.2009.06.063

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Epitaxial growth of Nd2Hf2O7(111) thin films on Ge(111) substrates by pulsed laser deposition

Wei Feng Hailing Tu Jun Du

Year: 2009 Journal: Applied Surface Science Vol: 256 (3)Pages: 615-618 Publisher: Elsevier BV

DOI: 10.1016/j.apsusc.2009.06.063

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Keywords:

Pulsed laser deposition Epitaxy Thin film Materials science Deposition (geology) Optoelectronics Laser Germanium Nanotechnology Chemical engineering Optics Silicon Layer (electronics) Physics Geology Engineering

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electronic and Structural Properties of Oxides

Physical Sciences → Materials Science → Materials Chemistry

Microwave Dielectric Ceramics Synthesis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Epitaxial growth of Nd2Hf2O7(111) thin films on Ge(111) substrates by pulsed laser deposition

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