Large and composition-dependent band gap bowing in InxGa1−xN alloys

Chris G. Van de Walle; Matthew D. McCluskey; Cyrus P. Master; Lucia Romano; N. M. Johnson

doi:10.1016/s0921-5107(98)00340-7

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Large and composition-dependent band gap bowing in InxGa1−xN alloys

Chris G. Van de Walle Matthew D. McCluskey Cyrus P. Master Lucia Romano N. M. Johnson

Year: 1999 Journal: Materials Science and Engineering B Vol: 59 (1-3)Pages: 274-278 Publisher: Elsevier BV

DOI: 10.1016/s0921-5107(98)00340-7

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Keywords:

Bowing Pseudopotential Materials science Band gap Diffraction Spectroscopy Condensed matter physics Rutherford backscattering spectrometry Strain (injury) Optics Physics Optoelectronics

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Metal and Thin Film Mechanics

Physical Sciences → Engineering → Mechanics of Materials

Large and composition-dependent band gap bowing in InxGa1−xN alloys

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