A computational study of dopant-segregated Schottky barrier MOSFETs

Abstract

We have simulated the electrical properties of dopant-segregated SBTs by Monte Carlo method. Our results demonstrate that DSS can significantly increase the drain current while the length of DSS region should be carefully designed. Furthermore, some important clue to understand the behavior and carrier transport of DSS is given that the maximal velocities at source and drain side all decrease with the increase of DSS length and the maximal velocity at source side shows saturation with the existence of DSS when drain voltage increases meanwhile the maximal velocity at drain side shows no saturation.