Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001)

Carmelo Lo Vecchio; Sushant Sonde; Corrado Bongiorno; Martin Rambach; Rositza Yakimova; V. Raineri; Filippo Giannazzo

doi:10.1186/1556-276x-6-269

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Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001)

Carmelo Lo Vecchio Sushant Sonde Corrado Bongiorno Martin Rambach Rositza Yakimova V. Raineri Filippo Giannazzo

Year: 2011 Journal: Nanoscale Research Letters Vol: 6 (1)Pages: 269-269 Publisher: Springer Science+Business Media

DOI: 10.1186/1556-276x-6-269

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Keywords:

Materials science Graphene Annealing (glass) Vicinal Perpendicular Nanoscopic scale Nanotechnology Epitaxy Silicon carbide Composite material Transmission electron microscopy High-resolution transmission electron microscopy Optoelectronics

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Graphene research and applications

Physical Sciences → Materials Science → Materials Chemistry

Carbon Nanotubes in Composites

Physical Sciences → Materials Science → Materials Chemistry

Diamond and Carbon-based Materials Research

Physical Sciences → Materials Science → Materials Chemistry

Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001)

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